Molecular beam epitaxy is a new crystal growth technique, abbreviated as MBE. In an ultra-high vacuum chamber, the source material is subjected to high-temperature evaporation, glow discharge ionization, gas cracking and electron beam heating evaporation to generate a molecular beam current. After the incident molecular beam exchanges energy with the substrate, it is adsorbed, migrated, nucleated and grown to form a film.

Molecular beam epitaxy mainly studies the growth of crystals and superlattices of different structures or different materials. The growth system is equipped with a variety of monitoring equipment to perform instantaneous measurement and analysis of substrate temperature, growth rate, and film thickness during growth. At the same time, the growth details such as surface irregularities, undulations, atomic coverage, adhesion coefficient, evaporation coefficient and surface diffusion distance are accurately monitored.

Molecular beam epitaxy was developed from the preparation of semiconductor thin film materials by vacuum evaporation technology in the 1950s, and has been improved by the development of ultra-high vacuum technology. The development of molecular beam epitaxy has opened up a series of new superlattice devices and expanded a new field of semiconductor science, which further illustrates the impact of the development of semiconductor materials on semiconductor physics and semiconductor devices.

The advantage of molecular beam epitaxy is that it can prepare ultra-thin layer of semiconductor materials; the surface of the epitaxial material has good surface morphology and large uniformity; it can be made into multilayer structures with different dopants or different compositions; The temperature of epitaxial growth is low, which is beneficial to improve the purity and integrity of the epitaxial layer; the growth environment is clean and the pollution is small.

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